SI3853DV-T1 Vishay/Siliconix, SI3853DV-T1 Datasheet - Page 2

• Manufacturer Part Number: SI3853DV-T1
• Description: MOSFET 20V 1.8A 1.15W
• Manufacturer: Vishay/Siliconix

Specifications of SI3853DV-T1

• Product Category: MOSFET
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 1.6 A
• Resistance Drain-source Rds (on): 0.2 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSOP-6
• Fall Time: 34 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 830 mW
• Rise Time: 34 ns
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 19 ns

Si3853DV
Vishay Siliconix
Notes:
a. Surface mounted on 1" x 1" FR4 board.
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Foot
MOSFET SPECIFICATIONS T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Body Diode Reverse Recovery Time
SCHOTTKY SPECIFICATIONS T
Parameter
Forward Voltage Drop
Maximum Reverse Leakage Current
Junction Capacitance
b
a
a
a
a
a
Steady State
Steady State
t ≤ 5 s
J
Symbol
R
V
= 25 °C, unless otherwise noted
Symbol
I
t
t
I
I
DS(on)
V
GS(th)
D(on)
Q
Q
d(on)
d(off)
GSS
DSS
g
Q
t
t
SD
t
rr
gd
fs
gs
r
J
V
I
C
f
g
rm
F
T
= 25 °C, unless otherwise noted
MOSFET
MOSFET
MOSFET
MOSFET
Schottky
Schottky
Device
V
DS
V
I
D
DS
≅ - 1 A, V
I
= - 10 V, V
F
= - 16 V, V
V
V
V
V
= - 1.05 A, dI/dt = 100 A/µs
V
V
V
V
I
DS
GS
GS
S
DS
DS
DD
DS
DS
V
I
F
V
= - 1.05 V, V
Test Conditions
R
≥ - 5 V, V
= - 4.5 V, I
= - 2.5 V, I
= V
R
= 0 V, V
= 0.5 A, T
= - 16 V, V
= - 10 V, R
= - 5 V, I
Test Conditions
= 20 V, T
= 20 V, T
GEN
GS
GS
V
V
I
F
Symbol
GS
R
R
, I
= - 4.5 V, I
= - 4.5 V, R
= 0.5 A
R
R
= 20 V
= 10 V
D
GS
thJA
= 0 V, T
thJF
GS
D
= - 250 µA
D
D
J
J
= - 1.8 A
GS
J
GS
= ± 12 V
L
= 125 °C
= 125 °C
= - 4.5 V
= - 1.8 A
= - 1.0 A
= 75 °C
= 10 Ω
= 0 V
= 0 V
J
D
= 75 °C
g
= - 1.8 A
= 6 Ω
Typical
103
130
140
93
75
80
Min.
- 0.5
- 5
Min.
Maximum
- 0.83
0.160
0.280
Typ.
3.6
2.7
0.4
0.6
0.002
11
34
19
24
20
S09-2276-Rev. B, 02-Nov-09
Typ.
0.42
0.33
0.06
110
125
150
165
1.5
90
95
31
Document Number: 70979
- 1.10
± 100
0.200
0.340
Max.
- 10
4.0
0.100
- 1
17
50
30
36
40
Max.
0.48
0.4
10
1
°C/W
Unit
Unit
nC
Unit
nA
µA
ns
mA
Ω
V
A
S
V
pF
V