SI4966DY-T1 Vishay/Siliconix, SI4966DY-T1 Datasheet

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... SO Top View Ordering Information: Si4966DY–T1 Si4966DY–T1–E3 (Lead (Pb)–free) Parameter Drain-Source Voltage Gate-Source Voltage = 150 _C) = 150 _C Continuous Drain Current (T Continuous Drain Current ( Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction) ...

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... Si4966DY Vishay Siliconix Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance Drain Source On State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge ...

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... Q – Total Gate Charge (nC) g Document Number: 70718 S-52637—Rev. C, 02-Jan- 1.5 V 2.5 3.0 3 Si4966DY Vishay Siliconix Transfer Characteristics 125 – 0.0 0.5 1.0 1.5 2.0 V – Gate-to-Source Voltage (V) GS Capacitance 4000 3200 C ...

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... Si4966DY Vishay Siliconix Source-Drain Diode Forward Voltage 40 = 150 0.0 0.2 0.4 0.6 0.8 V – Source-to-Drain Voltage (V) SD Threshold Voltage 0.4 0 –0.0 –0.2 –0.4 –0.6 –50 – – Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 – ...

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Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description ...