SI4966DY-T1 Vishay/Siliconix, SI4966DY-T1 Datasheet - Page 3

• Manufacturer Part Number: SI4966DY-T1
• Description: MOSFET 20V 7.1A 2W
• Manufacturer: Vishay/Siliconix

Specifications of SI4966DY-T1

• Product Category: MOSFET
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 7.1 A
• Resistance Drain-source Rds (on): 25 mOhms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Fall Time: 40 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 2 W
• Rise Time: 40 ns
• Factory Pack Quantity: 2500
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 90 ns

Document Number: 70718
S-52637—Rev. C, 02-Jan-06
0.10
0.08
0.06
0.04
0.02
0.00
40
30
20
10
0
5
4
3
2
1
0
0.0
0
0
V
I
D
0.5
DS
= 7.1 A
On-Resistance vs. Drain Current
= 10 V
V
5
DS
1.0
10
Q
Output Characteristics
g
– Drain-to-Source Voltage (V)
I
V
D
– Total Gate Charge (nC)
V
GS
1.5
GS
– Drain Current (A)
Gate Charge
10
= 5 thru 3 V
= 2.5 V
2.0
20
15
2.5
V
GS
3.0
30
= 4.5 V
20
1, 1.5 V
_
2.5 V
3.5
2 V
4.0
25
40
4000
3200
2400
1600
800
1.6
1.4
1.2
1.0
0.8
0.6
40
30
20
10
0
0
–50
0.0
0
C
On-Resistance vs. Junction Temperature
V
I
D
rss
GS
–25
= 7.1 A
0.5
= 4.5 V
V
V
4
DS
GS
Transfer Characteristics
0
– Drain-to-Source Voltage (V)
– Gate-to-Source Voltage (V)
C
C
T
1.0
iss
oss
J
25 _C
T
– Junction Temperature (_C)
Capacitance
25
C
8
= 125 _C
Vishay Siliconix
1.5
50
12
75
– 55 _C
2.0
Si4966DY
100
www.vishay.com
16
2.5
125
150
3.0
20
3