TP2104N3-P003 Supertex, TP2104N3-P003 Datasheet - Page 4
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TP2104N3-P003
Manufacturer Part Number
TP2104N3-P003
Description
MOSFET 40V 6Ohm
Manufacturer
Supertex
Datasheet
1.TP2104N3-P002-G.pdf
(6 pages)
Specifications of TP2104N3-P003
Product Category
MOSFET
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
- 0.25 A
Resistance Drain-source Rds (on)
6 Ohms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-92
Fall Time
4 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
0.74 W
Rise Time
4 ns
Factory Pack Quantity
2000
Typical Turn-off Delay Time
5 ns
Typical Performance Curves
100
-2.0
-1.6
-1.2
-0.8
-0.4
1.1
1.0
0.9
75
50
25
0
0
-50
0
0
Capacitance vs. Drain-to-Source Voltage
BV
V
DS
DSS
-2
Transfer Characteristics
-10
0
= -25V
Variation with Temperature
C
f = 1MHz
RSS
V
GS
V
-4
DS
T
(volts)
j
-20
50
° (
(volts)
C)
●
-6
1235 Bordeaux Drive, Sunnyvale, CA 94089
100
-30
-8
(cont.)
C
ISS
150
-10
-40
4
-10
1.2
1.1
1.0
0.9
0.8
0.7
20
16
12
-8
-6
-4
-2
8
4
0
0
V
-50
GS(th)
0
0
●
V
GS(th)
Tel: 408-222-8888
Gate Drive Dynamic Characteristics
On-Resistance vs. Drain Current
and R
35 pF
V
-0.4
DS
0.5
@ -1mA
V
GS
0
= -10V
Q (nanocoulombs)
DS(ON)
= -4.5V
G
I
R
D
-0.8
DS(ON)
1.0
(amperes)
Variation with Temperature
T
j
50
° (
V
●
C)
GS
@ -10V, -0.5A
-1.2
www.supertex.com
1.5
= -10V
V
125 pF
DS
100
-1.6
2.0
= -40V
-2.0
150
2.5
1.6
1.4
1.2
1.0
0.8
TP2104