VP2206N3-P002 Supertex, VP2206N3-P002 Datasheet - Page 4
![no-image](/images/manufacturer_photos/0/6/642/supertex_sml.jpg)
VP2206N3-P002
Manufacturer Part Number
VP2206N3-P002
Description
MOSFET 60V 0.9Ohm
Manufacturer
Supertex
Datasheet
1.VP2206N3-P003-G.pdf
(6 pages)
Specifications of VP2206N3-P002
Product Category
MOSFET
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
- 0.64 A
Resistance Drain-source Rds (on)
0.9 Ohms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-92
Minimum Operating Temperature
- 55 C
Power Dissipation
1 W
Factory Pack Quantity
2000
Typical Turn-off Delay Time
16 ns
Typical Performance Curves
400
300
200
100
-8.0
-6.0
-4.0
-2.0
1.1
1.0
0.9
-10
Supertex inc.
Capacitance vs. Drain-to-Source Voltage
0
0
-50
0
0
V
BV
DS
= -25V
DSS
-2.0
Transfer Characteristics
Variation with Temperature
-10
0
-4.0
V
V
GS
DS
T
j
-20
(volts)
50
(
(volts)
O
C)
-6.0
1235 Bordeaux Drive, Sunnyvale, CA 94089
100
-30
-8.0
f = 1.0MHz
(cont.)
C
ISS
-10
-40
150
4
-8.0
-6.0
-4.0
-2.0
5.0
4.0
3.0
2.0
1.0
1.2
1.1
1.0
0.9
0.8
0.7
-10
0
0
-50
V
0
0
Gate Drive Dynamic Characteristics
(th)
On-Resistance vs. Drain Current
310 pF
and R
Tel: 408-222-8888
V
-2.0
2.0
GS
0
= -5.0V
DS
Q
Variation with Temperature
G
V
(nanocoulombs)
DS
I
-4.0
D
4.0
= -10V
(amperes)
T
j
50
(
R
O
C)
DS(ON)
V
-6.0
6.0
(th)
@ -10V, -3.5A
@ -1.0mA
www.supertex.com
V
725 pF
DS
100
= -40V
V
-8.0
8.0
GS
= -10V
150
-10
10
2.0
1.6
1.2
0.8
0.4
0
VP2206