IS61LV25616AL-10TL-TR ISSI, Integrated Silicon Solution Inc, IS61LV25616AL-10TL-TR Datasheet - Page 11

• Manufacturer Part Number: IS61LV25616AL-10TL-TR
• Description: IC SRAM 4MBIT 10NS 44TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61LV25616AL-10TL-TR

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 4M (256K x 16)
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 44-TSOP II
• Density: 4Mb
• Access Time (max): 10ns
• Sync/async: Asynchronous
• Architecture: Not Required
• Clock Freq (max): Not RequiredMHz
• Operating Supply Voltage (typ): 3.3V
• Address Bus: 18b
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Number Of Ports: 1
• Supply Current: 100mA
• Operating Supply Voltage (min): 3.135V
• Operating Supply Voltage (max): 3.6V
• Operating Temperature Classification: Commercial
• Mounting: Surface Mount
• Pin Count: 44
• Word Size: 16b
• Number Of Words: 256K
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS61LV25616AL
Integrated Silicon Solution, Inc. — www.issi.com —
Rev. E
02/14/06
DATA RETENTION SWITCHING CHARACTERISTICS
Note 1:
DATA RETENTION WAVEFORM
Symbol
V
I
t
t
DR
SDR
RDR
DR
Typical values are measured at V
1.65V
1.4V
GND
Parameter
V
Data Retention Current
Data Retention Setup Time
Recovery Time
CE
DD
V
V
DD
DR
for Data Retention
DD
= 3.0V, T
t
SDR
Test Condition
See Data Retention Waveform
V
See Data Retention Waveform
See Data Retention Waveform
DD
= 2.0V, CE ≥ V
(CE Controlled)
A
= 25
O
C and not 100% tested.
DD
Data Retention Mode
CE ≥ V
– 0.2V
1-800-379-4774
DD
- 0.2V
Options
(LL)
Com.
Ind.
Min.
2.0
t
—
—
RC
0
t
RDR
Typ.
—
—
—
—
5
(1)
Max.
ISSI
3.6
10
15
—
—
Unit
mA
ns
ns
V
11
®
1
2
3
4
5
6
7
8
9
10
11
12