IS61C5128AS-25QLI-TR ISSI, Integrated Silicon Solution Inc, IS61C5128AS-25QLI-TR Datasheet - Page 13

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IS61C5128AS-25QLI-TR

Manufacturer Part Number
IS61C5128AS-25QLI-TR
Description
IC SRAM 4MBIT 25NS 32SOP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet

Specifications of IS61C5128AS-25QLI-TR

Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
4M (512K x 8)
Speed
25ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
32-SOP
Density
4Mb
Access Time (max)
25ns
Sync/async
Asynchronous
Architecture
Not Required
Clock Freq (max)
Not RequiredMHz
Operating Supply Voltage (typ)
5V
Address Bus
19b
Package Type
SOP
Operating Temp Range
-40C to 85C
Number Of Ports
1
Supply Current
15mA
Operating Supply Voltage (min)
4.5V
Operating Supply Voltage (max)
5.5V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
32
Word Size
8b
Number Of Words
512K
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Compliant, Lead free / RoHS Compliant
DATA RETENTION WAVEFORM (CE
IS61C5128AL/AS
DATA RETENTION SWITCHING CHARACTERISTICS (LOW POWER) (IS61/64C5128AS)
Note:
Integrated Silicon Solution, Inc. — www.issi.com
Rev. B
03/04/2008
Symbol
1. Typical Values are measured at V
V
I
t
t
DR
SDR
RDR
DR
4.5V
GND
Parameter
V
Data Retention Current
Data Retention Setup Time
Recovery Time
DD
VDD
V
CE
for Data Retention
DR
DD
= 5V, T
IS64C5128AL/AS
A
t
= 25
SDR
Test Condition
See Data Retention Waveform
V
V
See Data Retention Waveform
See Data Retention Waveform
o
DD
IN
C and not 100% tested.
≥ V
= 2.9V, CE ≥ V
CE
CE
CE
CE Controlled)
DD
– 0.2V, or V
DD
IN
– 0.2V
Data Retention Mode
CE ≥ VDD - 0.2V
≤ V
SS
+ 0.2V
typ.
Com.
Auto.
Ind.
(1)
t
RDR
Min.
2.9
t
RC
0
0.2
Max.
5.5
0.8
0.9
2
Unit
mA
ns
ns
V
13

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