PBSS4160PAN,115 NXP Semiconductors, PBSS4160PAN,115 Datasheet - Page 3

• Manufacturer Part Number: PBSS4160PAN,115
• Description: Transistors Bipolar - BJT 60V 1A NPN/PNP lo VCEsat transistor
• Manufacturer: NXP Semiconductors

Specifications of PBSS4160PAN,115

• Rohs: yes
• Configuration: Dual
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 60 V
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 7 V
• Collector-emitter Saturation Voltage: 90 mV
• Maximum Dc Collector Current: 1.5 A
• Gain Bandwidth Product Ft: 175 MHz
• Dc Collector/base Gain Hfe Min: 290
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: DFN2020-6
• Continuous Collector Current: 1 A
• Dc Current Gain Hfe Max: 430
• Maximum Power Dissipation: 1450 mW
• Minimum Operating Temperature: - 55 C

NXP Semiconductors
PBSS4160PAN
Product data sheet
Symbol
I
P
Per device
P
T
T
T
BM
j
amb
stg
tot
tot
Parameter
peak base current
total power dissipation
total power dissipation
junction temperature
ambient temperature
storage temperature
[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
Device mounted on an FR4 PCB, single-sided 35 µm copper strip line, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided 35 µm copper strip line, tin-plated, mounting pad for
collector 1 cm
Device mounted on 4-layer PCB 35 µm copper strip line, tin-plated and standard footprint.
Device mounted on 4-layer PCB 35 µm copper strip line, tin-plated, mounting pad for collector 1 cm
Device mounted on an FR4 PCB, single-sided 70 µm copper strip line, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided 70 µm copper strip line, tin-plated, mounting pad for
collector 1 cm
Device mounted on 4-layer PCB 70 µm copper strip line, tin-plated and standard footprint.
Device mounted on 4-layer PCB 70 µm copper strip line, tin-plated, mounting pad for collector 1 cm
2
2
All information provided in this document is subject to legal disclaimers.
.
.
Conditions
single pulse; t
T
T
amb
amb
14 January 2013
≤ 25 °C
≤ 25 °C
p
≤ 1 ms
60 V, 1 A NPN/NPN low VCEsat (BISS) transistor
[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
PBSS4160PAN
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-55
-65
© NXP B.V. 2013. All rights reserved
Max
1
370
570
530
700
450
760
700
1450
510
780
730
960
620
1040
960
2000
150
150
150
Unit
A
mW
mW
mW
mW
mW
mW
mW
mW
mW
mW
mW
mW
mW
mW
mW
mW
°C
°C
°C
2
2
.
.
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