BTA312-600B/DG,127 NXP Semiconductors, BTA312-600B/DG,127 Datasheet - Page 5

• Manufacturer Part Number: BTA312-600B/DG,127
• Description: Triacs 600 V 12 A TO220AB
• Manufacturer: NXP Semiconductors

Specifications of BTA312-600B/DG,127

• Rohs: yes
• On-state Rms Current (it Rms): 12 A
• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Off-state Leakage Current @ Vdrm Idrm: 600 V
• Holding Current (ih Max): 60 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 50 mA
• Mounting Style: Through Hole
• Package / Case: TO-220AB-3
• Factory Pack Quantity: 50

NXP Semiconductors
6. Characteristics
Table 6.
BTA312-600B
Product data sheet
Fig. 6.
Symbol
Static characteristics
I
I
I
V
V
I
GT
L
H
D
T
GT
Z
(K/W)
th(j-mb)
10
10
10
10
-1
-2
-3
1
10
(1) Unidirectional (half cycle)
(2) Bidirectional (full cycle)
Transient thermal impedance from junction to mounting base as a function of pulse duration
-5
Characteristics
Parameter
gate trigger current
latching current
holding current
on-state voltage
gate trigger voltage
off-state current
10
-4
Conditions
All information provided in this document is subject to legal disclaimers.
V
T
V
T
V
T
V
T
V
T
V
T
V
I
V
Fig. 11
V
Fig. 11
V
T
10
j
j
j
j
j
j
D
D
D
D
D
D
D
D
D
D
= 15 A; T
= 25 °C;
= 25 °C;
= 25 °C;
= 25 °C;
= 25 °C;
= 25 °C;
-3
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; T
= 400 V; I
= 12 V; I
= 600 V; T
(1)
(2)
Fig. 7
Fig. 7
Fig. 7
Fig. 8
Fig. 8
Fig. 8
j
T
T
T
G
G
G
T
4 October 2012
j
= 25 °C;
T
= 0.1 A; T2+ G+;
= 0.1 A; T2+ G-;
= 0.1 A; T2- G-;
= 0.1 A; T
= 25 °C;
= 0.1 A; T2+ G+;
= 0.1 A; T2+ G-;
= 0.1 A; T2- G-;
j
= 0.1 A; T
= 125 °C
10
-2
Fig. 10
Fig. 9
j
= 25 °C;
j
= 125 °C;
10
-1
Min
2
2
2
-
-
-
-
-
0.25
-
-
1
P
D
BTA312-600B
Typ
-
-
-
-
-
-
-
1.3
0.4
0.8
0.1
t
p
t
© NXP B.V. 2012. All rights reserved
p
3Q Hi-Com Triac
(s)
003aab775
Max
50
50
50
60
90
60
60
1.6
-
1.5
0.5
t
10
Unit
mA
mA
mA
mA
mA
mA
mA
V
V
V
mA
5 / 11