IS61LV25616AL-10T ISSI, Integrated Silicon Solution Inc, IS61LV25616AL-10T Datasheet - Page 16

• Manufacturer Part Number: IS61LV25616AL-10T
• Description: IC SRAM 4MBIT 10NS 44TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61LV25616AL-10T

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 4M (256K x 16)
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 44-TSOP II
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

PACKAGING INFORMATION
Mini Ball Grid Array
Package Code: B (48-pin)
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com —
Rev. D
01/15/03
mBGA - 6mm x 8mm
Sym.
N0.
Leads
A
A1
A2
D
D1
E
E1
e
b
D
A2
Min. Typ. Max.
0.60
7.90
5.90
0.30 0.35 0.40
0.24
MILLIMETERS
—
5.25 BSC
3.75 BSC
0.75 BSC
G
A
B
C
D
E
H
F
48
—
—
—
—
—
1.20
0.30
8.10
6.10
—
1
SEATING PLANE
Top View
2
3
0.009
0.024
0.311
0.232
0.012 0.014 0.016
E
Min. Typ. Max.
—
4
0.148 BSC
0.030 BSC
INCHES
0.207 BSC
5 6
—
—
—
—
—
0.047
0.012
0.319
0.240
—
A1
1-800-379-4774
A
D1
mBGA - 8mm x 10mm
Sym.
N0.
Leads
A
A1
A2
D
D1
E
E1
e
b
e
Min. Typ. Max.
Notes:
1. Controlling dimensions are in millimeters.
0.60
9.90
7.90
0.30 0.35 0.40
0.24
—
MILLIMETER
5.25 BSC
3.75 BSC
0.75 BSC
6
—
—
—
—
—
48
Bottom View
5
10.10
4
1.20
0.30
8.10
E1
—
3
2
φ b (48x)
ISSI
0.009
0.024
0.390
0.311
0.012 0.014 0.016
e
Min. Typ. Max.
—
1
0.148 BSC
0.030 BSC
INCHES
0.207 BSC
—
—
—
—
—
G
A
B
C
D
E
F
H
0.047
0.012
0.398
0.319
—
®