MT48H8M16LFB4-6 IT:K Micron Technology Inc, MT48H8M16LFB4-6 IT:K Datasheet - Page 35

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MT48H8M16LFB4-6 IT:K

Manufacturer Part Number
MT48H8M16LFB4-6 IT:K
Description
IC SDRAM 128MBIT 166MHZ 54VFBGA
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT48H8M16LFB4-6 IT:K

Format - Memory
RAM
Memory Type
Mobile SDRAM
Memory Size
128M (8Mx16)
Speed
166MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-40°C ~ 85°C
Package / Case
54-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Table 17: Truth Table – Current State Bank n, Command to Bank m
Notes 1–6 apply to all parameters and conditions
PDF: 09005aef832ff1ea
128mb_mobile_sdram_y35M.pdf - Rev. G 10/09 EN
Current State
Any
Idle
Row activating, active, or
precharging
Read
(auto precharge disabled)
Write
(auto precharge disabled)
Read
(with auto precharge)
Write
(with auto precharge)
Notes:
CS#
H
X
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
1. This table applies when CKE
2. This table describes alternate bank operation, except where noted; for example, the cur-
3. Current state definitions:
after
rent state is for bank n and the commands shown can be issued to bank m, assuming
that bank m is in such a state that the given command is supported. Exceptions are cov-
ered below.
Idle: The bank has been precharged, and
Row active: A row in the bank has been activated, and
accesses and no register accesses are in progress.
Read: A READ burst has been initiated, with auto precharge disabled, and has not yet
terminated or been terminated.
Write: A WRITE burst has been initiated, with auto precharge disabled, and has not yet
terminated or been terminated.
RAS# CAS# WE# Command/Action
H
H
H
H
H
H
H
H
H
H
H
X
X
L
L
L
L
L
L
L
L
L
L
t
XSR has been met (if the previous state was self refresh).
H
H
H
H
H
H
H
H
H
H
H
X
X
L
L
L
L
L
L
L
L
L
L
H
H
H
H
H
H
H
H
H
H
H
X
X
L
L
L
L
L
L
L
L
L
L
128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM
COMMAND INHIBIT (NOP/continue previous operation)
NO OPERATION (NOP/continue previous operation)
Any command otherwise supported for bank m
ACTIVE (select and activate row)
READ (select column and start READ burst)
WRITE (select column and start WRITE burst)
PRECHARGE
ACTIVE (select and activate row)
READ (select column and start new READ burst)
WRITE (select column and start WRITE burst)
PRECHARGE
ACTIVE (select and activate row)
READ (select column and start READ burst)
WRITE (select column and start new WRITE burst)
PRECHARGE
ACTIVE (select and activate row)
READ (select column and start new READ burst)
WRITE (select column and start WRITE burst)
PRECHARGE
ACTIVE (select and activate row)
READ (select column and start READ burst)
WRITE (select column and start new WRITE burst)
PRECHARGE
35
n-1
was HIGH and CKE
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t
RP has been met.
n
is HIGH (Table 18 (page 37)), and
t
RCD has been met. No data bursts/
©2008 Micron Technology, Inc. All rights reserved.
Truth Tables
7, 8, 14
7, 8, 15
7, 8, 16
7, 8, 17
Notes
7, 10
7, 11
7, 12
7, 13
7
7
9
9
9
9

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