MT48H8M16LFB4-6 IT:K Micron Technology Inc, MT48H8M16LFB4-6 IT:K Datasheet - Page 62

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MT48H8M16LFB4-6 IT:K

Manufacturer Part Number
MT48H8M16LFB4-6 IT:K
Description
IC SDRAM 128MBIT 166MHZ 54VFBGA
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT48H8M16LFB4-6 IT:K

Format - Memory
RAM
Memory Type
Mobile SDRAM
Memory Size
128M (8Mx16)
Speed
166MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-40°C ~ 85°C
Package / Case
54-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Figure 33: WRITE – Continuous Page Burst
Command
PDF: 09005aef832ff1ea
128mb_mobile_sdram_y35M.pdf - Rev. G 10/09 EN
BA0, BA1
Address
DQM
CKE
A10
CLK
DQ
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
Bank
T0
Row
Row
t CKH
t CMH
t AH
t AH
t AH
t RCD
Notes:
t CL
T1
NOP
t CH
1.
2. Page left open; no
t
WR must be satisfied prior to issuing a PRECHARGE command.
t CMS
t CK
t DS
Column m
D
WRITE
T2
Bank
IN
t CMH
t DH
t DS
T3
t
NOP
D
RP.
128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM
IN
t DH
62
t DS
T4
NOP
D
IN
All locations within same row
t DH
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Full page completed
t DS
T5
NOP
D
IN
t DH
(
(
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(
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(
(
(
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(
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(
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t DS
Tn + 1
NOP
D
IN
©2008 Micron Technology, Inc. All rights reserved.
Full-page burst
does not self-terminate.
Use BURST TERMINATE
command to stop. 1, 2
t DH
WRITE Operation
BURST TERM
Tn + 2
Don’t Care
Tn + 3
NOP

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