DMG201020R Panasonic Electronic Components, DMG201020R Datasheet - Page 3

• Manufacturer Part Number: DMG201020R
• Description: Transistors Bipolar - BJT Composite Transistor
• Manufacturer: Panasonic Electronic Components

Specifications of DMG201020R

• Rohs: yes
• Transistor Polarity: NPN/PNP
• Collector- Emitter Voltage Vceo Max: 50 V
• Emitter- Base Voltage Vebo: 5 V
• Dc Collector/base Gain Hfe Min: 120
• Package / Case: Mini5-G3-B
• Continuous Collector Current: 500 mA
• Maximum Power Dissipation: 300 mW

DMG20102
Characteristics charts of Tr1
Characteristics charts of Tr2
−120
−100
500
400
300
200
100
600
500
400
300
200
100
−80
−60
−40
−20
0
0
0
0
0
0
Collector-emitter voltage V
Collector-emitter voltage V
V
T
T
CE
Base-emitter voltage V
a
a
DMG20102(Tr1)_IC-VBE
DMG20102(Tr1)_IC-VCE
= 25°C
DMG20102(Tr2)_IC-VCE
= 25°C
0.2
= 10 V
−2
2
T
0.4
−4
4
a
I
I
I
= 85°C
C
C
C
 V
 V
 V
0.6
I
−6
B
6
= 3.0 mA
CE
BE
CE
0.8
I
−8
8
B
= −500 µA
−30°C
BE
−400 µA
−300 µA
−200 µA
−100 µA
1.0
2.7 mA
2.4 mA
2.1 mA
1.8 mA
1.5 mA
1.2 mA
0.9 mA
0.6 mA
0.3 mA
−10
10
CE
CE
25°C
(V)
(V)
(V)
1.2
−12
12
350
300
250
200
150
100
300
250
200
150
100
50
20
16
12
50
0
8
4
0
0
−1
1
1
Collector-base voltage V
DMG20102(Tr1)_Cob-VCB
DMG20102(Tr1)_hFE-IC
Collector current I
DMG20102(Tr2)_hFE-IC
Collector current I
T
T
Ver. CED
a
a
= 85°C
= 85°C
−10
10
−30°C
−30°C
25°C
25°C
C
h
h
ob
FE
FE
 V
10
 I
 I
C
C
CB
−10
10
C
C
2
V
V
I
f = 1 MHz
T
2
E
(mA)
CE
CE
(mA)
a
CB
= 0
= 25°C
= −10 V
= 10 V
(V)
−10
10
10
3
2
3
−10
−10
10
10
250
200
150
100
−10
10
50
−1
−1
−2
1
−1
−2
0
10
−1
1
−1
V
T
DMG20102(Tr1)_VCEsat-IC
a
DMG20102(Tr2)_VCEsat-IC
CE
= 25°C
Collector current I
Collector current I
Collector current I
DMG20102(Tr1)_fT-IC
= 10 V
T
a
−10
10
V
V
1
= 85°C
T
25°C
CE(sat)
CE(sat)
a
f
= 85°C
T
 I
25°C
 I
 I
C
10
−10
10
−30°C
−30°C
C
C
C
C
C
2
I
I
2
C
(mA)
C
(mA)
(mA)
/ I
/ I
B
B
= 10
= 10
−10
10
10
2
3
3
3