DMG201020R Panasonic Electronic Components, DMG201020R Datasheet - Page 4

• Manufacturer Part Number: DMG201020R
• Description: Transistors Bipolar - BJT Composite Transistor
• Manufacturer: Panasonic Electronic Components

Specifications of DMG201020R

• Rohs: yes
• Transistor Polarity: NPN/PNP
• Collector- Emitter Voltage Vceo Max: 50 V
• Emitter- Base Voltage Vebo: 5 V
• Dc Collector/base Gain Hfe Min: 120
• Package / Case: Mini5-G3-B
• Continuous Collector Current: 500 mA
• Maximum Power Dissipation: 300 mW

DMG20102
−600
−500
−400
−300
−200
−100
0
0
V
CE
Base-emitter voltage V
DMG20102(Tr2)_IC-VBE
= −10 V
− 0.4
I
T
C
a
= 85°C
 V
BE
− 0.8
25°C
BE
−30°C
(V)
−1.2
25
20
15
10
5
0
−1
Collector-base voltage V
DMG20102(Tr2)_Cob-VCB
Ver. CED
C
ob
 V
−10
CB
I
f =1 MHz
T
E
a
CB
= 0
= 25°C
(V)
−10
2
250
200
150
100
50
−10
0
−1
Collector current I
DMG20102(Tr2)_fT-IC
−1
f
T
 I
C
−10
C
V
T
a
CE
(mA)
= 25°C
= −10 V
−10
2
4