MT46H8M32LFB5-5:H TR Micron Technology Inc, MT46H8M32LFB5-5:H TR Datasheet - Page 43
![no-image](/images/manufacturer_photos/0/4/441/micron_technology_inc_sml.jpg)
MT46H8M32LFB5-5:H TR
Manufacturer Part Number
MT46H8M32LFB5-5:H TR
Description
IC DDR SDRAM 256MBIT 90VFBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT46H16M16LFBF-5H.pdf
(96 pages)
Specifications of MT46H8M32LFB5-5:H TR
Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
256M (8Mx32)
Speed
200MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
0°C ~ 70°C
Package / Case
90-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
- Current page: 43 of 96
- Download datasheet (4Mb)
PDF: 09005aef834bf85b
256mb_mobile_ddr_sdram_t36n.pdf - Rev. H 11/09 EN
4. AUTO REFRESH and LOAD MODE REGISTER commands can only be issued when all
5. All states and sequences not shown are illegal or reserved.
6. Requires appropriate DM masking.
7. A WRITE command can be applied after the completion of the READ burst; otherwise, a
banks are idle.
BURST TERMINATE must be used to end the READ burst prior to asserting a WRITE com-
mand.
From
Command
READ with
Auto Precharge
To Command
READ or READ with auto precharge
WRITE or WRITE with auto precharge
PRECHARGE
ACTIVE
43
256Mb: x16, x32 Mobile LPDDR SDRAM
Micron Technology, Inc. reserves the right to change products or specifications without notice.
(with Concurrent Auto
©2008 Micron Technology, Inc. All rights reserved.
Minimum Delay
[CL + (BL/2)]
Precharge)
(BL/2) ×
1
1
Truth Tables
t
t
CK
CK
t
CK
t
CK
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