BC857CW-G Comchip Technology, BC857CW-G Datasheet - Page 2

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BC857CW-G

Manufacturer Part Number
BC857CW-G
Description
Transistors Bipolar - BJT -50, -.1
Manufacturer
Comchip Technology
Datasheet

Specifications of BC857CW-G

Rohs
yes
QW-BTR36
Electrical Characteristics
(BC856AW-G Thru. BC858CW-G, @T
Small Signal Transistor
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Break Voltage
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Parameter
BC856AW,857AW,858AW
BC856BW,857BW,858BW
BC857CW,858CW
BC846W-G, BC857W-G
BC856W-G
BC857W-G
BC858W-G
BC856W-G
BC856W-G
BC858W-G
BC858W-G
Comchip Technology CO., LTD.
A
= 25 C unless otherwise specified)
Symbol
V
V
V
V
V
I
CE(sat)
BE(sat)
h
C
CBO
CBO
CEO
EBO
f
O
FE
T
ob
I
I
I
I
V
V
I
V
f=100MH
V
C
C
E
C
C
CB
CE
CE
CB
= -1μA , I
=-100mA , I
= -10μA , I
= -10mA , I
=-100mA , I
Test Conditions
= -30V , I
=-5V , I
= -5V , I
=-10V , f=1MH
Z
C
C
E
C
=-10mA
=0
E
B
B
B
=0
= -2mA
=0
=-5mA
=0
=-5mA
Z
MIN
125
220
420
-80
-50
-30
-65
-45
-30
100
-5
SMD Diodes Specialist
COMCHIP
-0.65
MAX
-1.1
-15
250
475
800
4.5
Units
MH
nA
pF
V
V
V
V
V
Z
Page 2
REV:A

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