BC857CW-G Comchip Technology, BC857CW-G Datasheet - Page 4

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BC857CW-G

Manufacturer Part Number
BC857CW-G
Description
Transistors Bipolar - BJT -50, -.1
Manufacturer
Comchip Technology
Datasheet

Specifications of BC857CW-G

Rohs
yes
QW-BTR36
Electrical Characteristic Curves (BC856AW-G Thru. BC858CW-G)
Small Signal Transistor
1000
800
600
400
200
-10
-10
-10
-10
-10
-10
-10
-10
0
-10
4
3
2
4
3
2
-10
-10
Fig.11 Collector-ernitter saturation voltage
Fig.7 Collector-ernitter saturation voltage
Fig.9 DC current gain as a function fo
-2
-1
-1
Tamb=150°C
as a function of collector current
typical values.
Tamb=150°C
-10
as a function of collector current;
typical values.
collector current ;typical values.
-1
-1
-1
Tamb=25°C
Tamb=25°C
-1
I
I
C
I
C
C
(mA)
-10
-10
(mA)
(mA)
-10
BC857CW;V
BC857BW;I
BC857CW;I
-10
-10
-10
2
2
C
2
C
Comchip Technology CO., LTD.
CE
/I
/I
B
B
= -5V
= 20
= 20
-10
-10
-10
3
3
3
-1000
-1200
-1000
-1200
-800
-600
-400
-200
-800
-600
-400
-200
-1000
-1200
-800
-600
-400
-200
0
0
-10
-10
Fig.10 Base-Emitter Voltage as a function
Fig.8 Base-Emitter Saturation Voltage as
0
-2
Fig.12 Base-Emitter Saturation Voltage as
-10
-1
-1
a function of collector current;typical
values
-10
of collector current;typical values
a function of collector current;typical
values
-1
-1
-1
-1
I
I
C
C
(mA)
SMD Diodes Specialist
-10
I
(mA)
C
COMCHIP
-10
(mA)
-10
BC857CW;V
BC857BW;I
BC857CW;I
-10
-10
2
-10
2
C
CE
2
/I
= -5V
B
C
= 20
/I
B
= 20
Page 4
REV:A
-10
-10
3
3
-10
3

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