BT234-800E,127 NXP Semiconductors, BT234-800E,127 Datasheet - Page 3

• Manufacturer Part Number: BT234-800E,127
• Description: Triacs 4Q Triac
• Manufacturer: NXP Semiconductors

Specifications of BT234-800E,127

• Rohs: yes
• Mounting Style: Through Hole
• Package / Case: TO-220AB-3
• Factory Pack Quantity: 50

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
BT234-800E
Product data sheet
Symbol
V
I
I
I
dI
I
P
P
T
T
T(RMS)
TSM
2
GM
Fig 1.
stg
j
DRM
t
GM
G(AV)
T
/dt
I
T(RMS)
(A)
5
4
3
2
1
0
-50
base temperature; maximum values
RMS on-state current as a function of mounting
Limiting values
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
I
2
t for fusing
0
50
100
All information provided in this document is subject to legal disclaimers.
T
003aag692
mb
110 °C
(°C)
Conditions
full sine wave; T
see
full sine wave; T
see
full sine wave; T
t
I
I
I
I
over any 20 ms period
p
T
T
T
T
150
Rev. 1 — 4 October 2011
= 10 ms; sine-wave pulse
= 7 A; I
= 7 A; I
= 7 A; I
= 7 A; I
Figure
Figure
G
G
G
G
2; see
4; see
= 0.2 A; dI
= 0.2 A; dI
= 0.2 A; dI
= 0.2 A; dI
Fig 2.
mb
j(init)
j(init)
I
T(RMS)
Figure 3
Figure 5
(A)
≤ 110 °C; see
= 25 °C; t
= 25 °C; t
10
G
G
G
G
2
8
6
4
0
/dt = 0.2 A/µs; T2+ G+
/dt = 0.2 A/µs; T2+ G-
/dt = 0.2 A/µs; T2- G-
/dt = 0.2 A/µs; T2- G+
10
duration; maximum values
RMS on-state current as a function of surge
-2
p
p
= 20 ms;
= 16.7 ms
Figure
10
-1
1;
BT234-800E
surge duration (s)
1
Min
-
-
-
-
-
-
-
-
-
-
-
-
-40
-
© NXP B.V. 2011. All rights reserved.
003aag663
150
125
Max
800
4
35
38.5
6.1
50
50
50
10
2
5
0.5
10
4Q Triac
Unit
V
A
A
A
A
A/µs
A/µs
A/µs
A/µs
A
W
W
°C
°C
3 of 14
2
s