BT138-600/DG,127 NXP Semiconductors, BT138-600/DG,127 Datasheet - Page 3

• Manufacturer Part Number: BT138-600/DG,127
• Description: Triacs 4Q TRIAC
• Manufacturer: NXP Semiconductors

Specifications of BT138-600/DG,127

• Rohs: yes
• Mounting Style: Through Hole
• Package / Case: TO-220AB-3
• Factory Pack Quantity: 50

NXP Semiconductors
BT138-600
Product data sheet
Symbol
Fig. 1.
I
I
dI
I
P
P
T
T
TSM
2
GM
stg
j
t
GM
G(AV)
T
/dt
I
T(RMS)
(A)
15
12
9
6
3
0
RMS on-state current as a function of mounting
base temperature; maximum values
-50
Parameter
non-repetitive peak on-state
current
I
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
2
t for fusing
0
50
100
All information provided in this document is subject to legal disclaimers.
T
99 °C
mb
003aaj938
(°C)
150
Conditions
full sine wave; T
t
full sine wave; T
t
t
I
T2+ G+
I
T2+ G-
I
T2- G-
I
T2- G+
p
p
p
T
T
T
T
over any 20 ms period
= 20 ms;
= 16.7 ms
= 10 ms; sine-wave pulse
= 20 A; I
= 20 A; I
= 20 A; I
= 20 A; I
2 August 2012
G
G
G
G
Fig.
Fig. 2.
= 0.2 A; dI
= 0.2 A; dI
= 0.2 A; dI
= 0.2 A; dI
I
T(RMS)
4;
j(init)
j(init)
(A)
Fig. 5
10
50
40
30
20
0
= 25 °C;
= 25 °C;
f = 50 Hz; T
RMS on-state current as a function of surge
duration; maximum values
10
G
G
G
G
-2
/dt = 0.2 A/µs;
/dt = 0.2 A/µs;
/dt = 0.2 A/µs;
/dt = 0.2 A/µs;
mb
10
= 99 °C
-1
surge duration (s)
1
Min
-
-
-
-
-
-
-
-
-
-
-40
-
© NXP B.V. 2012. All rights reserved
BT138-600
003aaj940
Max
95
105
45
50
50
50
10
2
5
0.5
150
125
10
4Q Triac
Unit
A
A
A
A/µs
A/µs
A/µs
A/µs
A
W
W
°C
°C
2
3 / 12
s