BT137X-600/DG,127 NXP Semiconductors, BT137X-600/DG,127 Datasheet - Page 4

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BT137X-600/DG,127

Manufacturer Part Number
BT137X-600/DG,127
Description
Triacs 4Q TRIAC
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BT137X-600/DG,127

Rohs
yes
Mounting Style
Through Hole
Package / Case
TO-220F-3
Factory Pack Quantity
50
1;3 Semiconductors
DYNAMIC CHARACTERISTICS
T
June 2001
Triacs
j
SYMBOL PARAMETER
dV
dV
t
gt
= 25 ˚C unless otherwise stated
D
com
/dt
/dt
Critical rate of rise of
off-state voltage
Critical rate of change of
commutating voltage
Gate controlled turn-on
time
CONDITIONS
V
T
waveform; gate open
circuit
V
I
dI
open circuit
I
I
T(RMS)
TM
G
j
DM
DM
com
= 125 ˚C; exponential
= 0.1 A; dI
= 12 A; V
= 67% V
= 400 V; T
/dt = 3.6 A/ms; gate
= 8 A;
D
G
DRM(max)
/dt = 5 A/μs
= V
j
BT137X-
= 95 ˚C;
3
DRM(max)
;
;
100
...
-
-
MIN.
...F
50
-
-
200
...G
10
-
TYP.
250
Product specification
20
BT137X series
2
MAX.
-
-
-
Rev 1.400
UNIT
V/μs
V/μs
μs

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