BT137X-600/DG,127 NXP Semiconductors, BT137X-600/DG,127 Datasheet - Page 5

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BT137X-600/DG,127

Manufacturer Part Number
BT137X-600/DG,127
Description
Triacs 4Q TRIAC
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BT137X-600/DG,127

Rohs
yes
Mounting Style
Through Hole
Package / Case
TO-220F-3
Factory Pack Quantity
50
1;3 Semiconductors
June 2001
Triacs
Fig.1. Maximum on-state dissipation, P
on-state current, I
on-state current I
Fig.2. Maximum permissible non-repetitive peak
Fig.3. Maximum permissible non-repetitive peak
12
10
1000
80
70
60
50
40
30
20
10
on-state current I
8
6
4
2
0
100
0
0
10
1
1
Ptot / W
ITSM / A
10us
ITSM / A
sinusoidal currents, t
sinusoidal currents, f = 50 Hz.
2
T2- G+ quadrant
100us
dI /dt limit
1
T(RMS)
Number of cycles at 50Hz
TSM
T
10
TSM
, versus number of cycles, for
4
IT(RMS) / A
, where α = conduction angle.
, versus pulse width t
1ms
T / s
I
6
T
Tj initial = 25 C max
I
p
T
100
Tj initial = 25 C max
≤ 20ms.
T
10ms
Ths(max) / C
8
tot
120
90
30
60
= 180
, versus rms
I TSM
time
I TSM
time
p
100ms
, for
1000
10
71
80
89
98
107
116
125
4
Fig.5. Maximum permissible repetitive rms on-state
current I
V
10
Fig.4. Maximum permissible rms current I
GT
8
6
4
2
0
-50
1.6
1.4
1.2
0.8
0.6
0.4
25
20
15
10
IT(RMS) / A
5
0
0.01
(T
1
-50
IT(RMS) / A
VGT(25 C)
j
Fig.6. Normalised gate trigger voltage
)/ V
VGT(Tj)
T(RMS)
versus heatsink temperature T
GT
currents, f = 50 Hz; T
(25˚C), versus junction temperature T
, versus surge duration, for sinusoidal
0
0
0.1
surge duration / s
BT137X
Tj / C
Ths / C
50
50
73 C
Product specification
hs
BT137X series
1
≤ 73˚C.
100
100
hs
.
Rev 1.400
T(RMS)
150
10
150
,
j
.

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