NCV8871LVBGEVB ON Semiconductor, NCV8871LVBGEVB Datasheet - Page 7
NCV8871LVBGEVB
Manufacturer Part Number
NCV8871LVBGEVB
Description
Power Management IC Development Tools NCV8871 EVAL BOARD
Manufacturer
ON Semiconductor
Datasheet
1.NCV8871LVBGEVB.pdf
(12 pages)
Specifications of NCV8871LVBGEVB
Rohs
yes
125
123
121
119
117
115
6
5
4
3
2
1
0
−50
−40
7
6
5
4
3
2
1
0
0
Figure 6. Minimum On Time vs. Temperature
T
J
Figure 2. Sleep Current vs. Input Voltage
Figure 4. Sleep Current vs. Temperature
= 25°C
T
T
0
J
J
, JUNCTION TEMPERATURE (°C)
, JUNCTION TEMPERATURE (°C)
10
10
V
IN
, INPUT VOLTAGE (V)
50
20
60
TYPICAL PERFORMANCE CHARACTERISTICS
100
110
30
V
150
IN
= 13.2 V
http://onsemi.com
200
40
160
7
1.010
1.005
1.000
0.995
0.990
3.30
3.25
3.20
3.15
3.10
3.05
3.00
5.5
5.0
4.5
4.0
3.5
−40
−40
0
V
f
Figure 5. Quiescent Current vs. Temperature
s
IN
Figure 3. Quiescent Current vs. Switching
= 170 kHz
= 13.2 V
Figure 7. Normalized Current Limit vs.
200
T
T
f
s
J
J
, SWITCHING FREQUENCY (kHz)
, JUNCTION TEMPERATURE (°C)
, JUNCTION TEMPERATURE (°C)
10
10
400
Temperature
Frequency
60
60
600
110
110
T
V
J
IN
800
= 25°C,
= 13.2 V
1000
160
160