EVAL-ADM1276EBZ Analog Devices, EVAL-ADM1276EBZ Datasheet - Page 4
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EVAL-ADM1276EBZ
Manufacturer Part Number
EVAL-ADM1276EBZ
Description
Power Management IC Development Tools EVALUATION BOARD
Manufacturer
Analog Devices
Type
Hot Swap & Power Distributionr
Series
ADM1276r
Datasheet
1.EVAL-ADM1276EBZ.pdf
(48 pages)
Specifications of EVAL-ADM1276EBZ
Rohs
yes
Tool Is For Evaluation Of
ADM1276
Input Voltage
20 V
Factory Pack Quantity
1
ADM1276
SPECIFICATIONS
V
Table 1.
Parameter
POWER SUPPLY
UV PIN
OV PIN
SENSE+ AND SENSE− PINS
VCAP PIN
ISET PIN
GATE PIN
HOT SWAP SENSE VOLTAGE
CC
Gate Pull-Down Current
Gate Holdoff Resistance
Operating Voltage Range
Undervoltage Lockout
Undervoltage Hysteresis
Quiescent Current
Input Current
UV Threshold
UV Threshold Hysteresis
UV Glitch Filter
UV Propagation Delay
Input Current
OV Threshold
OV Threshold Hysteresis
OV Glitch Filter
OV Propagation Delay
Input Current
Input Imbalance
Internally Regulated
Reference Select Threshold
Internal Reference
Gain of Current Sense
Input Current
Gate Drive Voltage
Gate Pull-Up Current
Hot Swap Sense Voltage
= 2.95 V to 20 V, V
Regulation
Slow
Fast
Foldback Inactive
Voltage
Amplifier
Current Limit
CC
≥ V
SENSE+
Symbol
V
I
I
UV
UV
UV
UV
I
OV
OV
OV
OV
I
I
V
V
V
AV
I
ΔV
I
I
I
I
I
V
CC
UV
OV
SENSEx
ΔSENSE
ISET
GATEUP
GATEDN
GATEDN_REG
GATEDN_SLOW
GATEDN_FAST
CC
VCAP
ISETRSTH
CLREF
SENSECL
, V
CSAMP
TH
HYST
GF
PD
GATE
TH
HYST
GF
PD
SENSE+
= 2 V to 20 V, V
Min
2.95
2.4
0.97
40
2
0.97
50
0.5
2.66
1.35
10
4.5
8
4.5
−20
45
5
750
19.6
24.6
19.6
9.6
4.6
1500
Typ
90
1.0
50
5
1.0
60
1.0
2.7
1.5
1
50
12
60
10
20
20
25
20
10
5
SENSE
Max
20
2.7
120
5
100
1.03
60
7
8
100
1.03
70
1.5
2
150
5
2.74
1.65
100
14
13
10
6
−30
75
15
2000
20.4
25.4
20.4
10.4
5.4
Rev. B | Page 4 of 48
= (V
SENSE+
Unit
V
V
mV
mA
nA
V
mV
μs
μs
nA
V
mV
μs
μs
μA
μA
V
V
V
V/V
nA
V
V
V
V
μA
μA
mA
mA
Ω
mV
mV
mV
mV
mV
− V
Test Conditions/Comments
V
GATE on and power monitor running
UV ≤ 3.6 V
UV falling
50 mV overdrive
UV low to GATE pull-down active
OV ≤ 3.6 V
OV rising
50 mV overdrive
OV high to GATE pull-down active
Per individual pin; SENSE+, SENSE− = 20 V
I
0 µA ≤ I
If V
Accuracies included in total sense voltage accuracies
Accuracies included in total sense voltage accuracies
V
Maximum voltage on the gate is always clamped to ≤31 V
ΔV
17 V ≥ V
20 V ≥ V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
ΔSENSE
SENSE−
CC
ISET
SENSE+
SENSE+
GATE
GATE
GATE
GATE
CC
ISET
SS
GATE
ISET
ISET
ISET
ISET
GATE
ISET
≥ 2 V
rising
= 0 V
≤ V
> 1.65 V; V
= 1.25 V; V
= 1.0 V; V
= 0.5 V; V
= 0.25 V; V
≥ 2 V; V
= 0 V
≥ 2 V
≥ 12 V; V
= (SENSE+) + 3 V; I
= (I
) = 0 V, T
> V
= V
= V
= V
VCAP
VCAP
CC
CC
SENSE+
ISETRSTH
GATE
CC
CC
≥ 8 V; I
≥ 17 V; I
≤ 100 µA; C
ISET
= 5 V; I
= 2.95 V; I
− V
CC
FLB
FLB
) − (I
= 1.0 V; (SENSE+) − (SENSE−) = 30 mV
FLB
FLB
FLB
, an internal 1 V reference (V
A
≥ 12 V
> 1.12 V
> 0.57 V
SENSE+
GATE
= −40°C to +85°C, unless otherwise noted.
> 1.12 V; V
> 1.395 V
> 0.295 V
GATE
SENSE−
GATE
≤ 5 μA
GATE
≤ 5 μA
≤ 5 μA
VCAP
)
GATE
≤ 1 μA
= 1 μF
= 0 μA; V
GATE
= (SENSE+) + 3 V; I
SS
≥ 2 V
CLREF
Data Sheet
) is used
GATE
= 0 μA;