BC559C T/R NXP Semiconductors, BC559C T/R Datasheet - Page 2

• Manufacturer Part Number: BC559C T/R
• Description: Transistors Bipolar - BJT TRANS GP TAPE RADIAL
• Manufacturer: NXP Semiconductors

Specifications of BC559C T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 30 V
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.1 A
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 420 at 2 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-54
• Dc Current Gain Hfe Max: 420 at 2 mA at 5 V
• Maximum Power Dissipation: 500 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 2000
• Part # Aliases: BC559C,116

NXP Semiconductors
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 30 V).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
PNP transistor in a TO-92 (SOT54) plastic package.
NPN complement: BC549.
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
2004 Nov 05
BC559C
V
V
V
I
I
I
P
T
T
T
C
CM
BM
SYMBOL
stg
j
amb
CBO
CEO
EBO
tot
PNP general purpose transistor
TYPE NUMBER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
ambient temperature
PARAMETER
SC-43A
NAME
plastic single-ended leaded (through hole) package; 3 leads
open emitter
open base
open collector
T
amb
2
≤ 25 °C
PINNING
handbook, halfpage
DESCRIPTION
CONDITIONS
Fig.1
PACKAGE
PIN
1
2
3
Simplified outline (TO-92; SOT54)
and symbol.
1
2
emitter
base
collector
3
−
−
−
−
−
−
−
−65
−
−65
DESCRIPTION
MIN.
MAM281
Product data sheet
−30
−30
−5
−100
−200
−200
500
+150
150
+150
MAX.
2
VERSION
BC559
SOT54
V
V
V
mA
mA
mA
mW
°C
°C
°C
3
1
UNIT