PBSS2515M T/R NXP Semiconductors, PBSS2515M T/R Datasheet - Page 6

• Manufacturer Part Number: PBSS2515M T/R
• Description: Transistors Bipolar - BJT TRANS BISS TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PBSS2515M T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 15 V
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 6 V
• Gain Bandwidth Product Ft: 420 MHz
• Dc Collector/base Gain Hfe Min: 200 at 10 mA at 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-101
• Continuous Collector Current: 0.5 A
• Maximum Power Dissipation: 430 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 10000
• Part # Aliases: PBSS2515M,315

NXP Semiconductors
2003 Sep 15
handbook, halfpage
15 V, 0.5 A
NPN low V
T
(1) I
(2) I
(3) I
(4) I
Fig.6
amb
(A)
I C
0.8
0.6
0.4
0.2
= 25 °C.
B
B
B
B
1
0
= 7 mA.
= 6.3 mA.
= 5.6 mA.
= 4.9 mA.
0
Collector current as a function of
collector-emitter voltage; typical values.
0.5
CEsat
(5) I
(6) I
(7) I
(8) I
(3)
B
B
B
B
(2)
= 4.2 mA.
= 3.5 mA.
= 2.8 mA.
= 2.1 mA.
(BISS) transistor
1
(10)
(7)
(8)
(9)
(1)
(4)
(5)
(6)
1.5
(9) I
(10) I
V CE (V)
B
B
MLE099
= 1.4 mA.
= 0.7 mA.
2
6
handbook, halfpage
R CEsat
I
(1) T
(2) T
(3) T
Fig.7
C
/I
(Ω)
B
10
10
= 20.
10
−1
amb
amb
amb
10
1
2
−1
= 150 °C.
= 25 °C.
= −55 °C.
Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
1
(1)
(3)
10
(2)
PBSS2515M
10
Product data sheet
2
I C (mA)
MLE103
10
3