PN2222A T/R NXP Semiconductors, PN2222A T/R Datasheet - Page 4

• Manufacturer Part Number: PN2222A T/R
• Description: Transistors Bipolar - BJT TRANS SW TAPE WIDE PITCH
• Manufacturer: NXP Semiconductors

Specifications of PN2222A T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 75 V
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 0.6 A
• Gain Bandwidth Product Ft: 300 MHz
• Dc Collector/base Gain Hfe Min: 100 at 150 mA at 10 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-54
• Dc Current Gain Hfe Max: 100 at 150 mA at 10 V
• Maximum Power Dissipation: 500 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 2000
• Part # Aliases: PN2222A,116

NXP Semiconductors
2004 Oct 11
NPN switching transistor
V
R1 = 68 Ω; R2 = 325 Ω; R
V
Oscilloscope: input impedance Z
i
BB
= 9.5 V; T = 500 µs; t
= −3.5 V; V
CC
= 29.5 V.
p
= 10 µs; t
B
= 325 Ω; R
i
= 50 Ω.
r
oscilloscope
= t
f
C
≤ 3 ns.
= 160 Ω.
V
I
Fig.2 Test circuit for switching times.
(probe)
450 Ω
R1
R2
R
B
V
BB
4
R
C
V
CC
DUT
V
o
mlb826
(probe)
450 Ω
oscilloscope
Product data sheet
PN2222A