BF720 T/R NXP Semiconductors, BF720 T/R Datasheet - Page 3

• Manufacturer Part Number: BF720 T/R
• Description: Transistors Bipolar - BJT TRANS HV TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of BF720 T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 300 V
• Collector- Emitter Voltage Vceo Max: 300 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.1 A
• Gain Bandwidth Product Ft: 60 MHz
• Dc Collector/base Gain Hfe Min: 50 at 25 mA at 20 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-223
• Maximum Power Dissipation: 1200 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 1000
• Part # Aliases: BF720,115

NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
CHARACTERISTICS
T
1999 Apr 21
R
R
I
I
h
V
C
f
j
CBO
EBO
T
SYMBOL
SYMBOL
FE
= 25 °C unless otherwise specified.
CEsat
NPN high-voltage transistors
th j-a
th j-s
re
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage I
feedback capacitance
transition frequency
PARAMETER
PARAMETER
I
I
I
I
I
I
E
E
C
C
C
C
C
= 0; V
= 0; V
= 0; V
= 25 mA; V
= 30 mA; I
= i
= 10 mA; V
c
= 0; V
3
CB
CB
EB
= 200 V
= 200 V; T
= 5 V
CONDITIONS
CE
B
CE
CE
= 5 mA
= 30 V; f = 1 MHz
note 1
note 1
= 20 V
= 10 V; f = 100 MHz
CONDITIONS
j
= 150 °C
−
−
−
50
−
−
60
MIN.
VALUE
BF720; BF722
106
25
Product data sheet
10
10
50
−
0.6
1.6
−
MAX.
2
.
UNIT
K/W
K/W
nA
µA
nA
V
pF
MHz
UNIT