BCV64B T/R NXP Semiconductors, BCV64B T/R Datasheet - Page 9

• Manufacturer Part Number: BCV64B T/R
• Description: Transistors Bipolar - BJT TRANS GP TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of BCV64B T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Dual
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 30 V
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 6 V
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 220 at 2 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-143
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 250 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: BCV64B,215

NXP Semiconductors
13. Revision history
Table 10.
BCV64B
Product data sheet
Document ID
BCV64B v.4
Modifications:
BCV64B_3
BCV64_CNV_2
Revision history
Release date
20100802
19990521
19970310
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The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Section 1 “Product
Section 3 “Ordering
Section 4
Figure
Section 8 “Application
Section 9 “Test
Figure
Section 11 “Packing
Section 12
Section 14 “Legal
1, 2,
6: superseded by minimized package outline drawing.
All information provided in this document is subject to legal disclaimers.
“Marking”: updated.
“Soldering”: added.
3
and 4: added.
Data sheet status
Product data sheet
Product specification
Product specification
information”: added.
information”: updated.
Rev. 4 — 2 August 2010
profile”: amended.
information”: added.
information”: added.
information”: added.
Change notice
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PNP general-purpose double transistor
Supersedes
BCV64B_3
BCV64_CNV_2
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© NXP B.V. 2010. All rights reserved.
BCV64B
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