BC857AW /T3 NXP Semiconductors, BC857AW /T3 Datasheet - Page 2
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BC857AW /T3
Manufacturer Part Number
BC857AW /T3
Description
Transistors Bipolar - BJT TRANS GP TAPE-11
Manufacturer
NXP Semiconductors
Datasheet
1.BC857CW_T3.pdf
(10 pages)
Specifications of BC857AW /T3
Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
50 V
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Collector-emitter Saturation Voltage
5 V
Gain Bandwidth Product Ft
100 MHz
Dc Collector/base Gain Hfe Min
125 at 2 mA at 5 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-323
Continuous Collector Current
0.1 A
Maximum Power Dissipation
200 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
10000
Part # Aliases
BC857AW,135
NXP Semiconductors
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 65 V).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
PNP transistor in a SOT323 plastic package.
NPN complements: BC846W, BC847W and BC848W.
MARKING
Note
1. * = -: made in Hong Kong.
2002 Feb 04
BC856W
BC856AW
BC856BW
BC857W
BC857AW
BC857BW
BC857CW
BC858W
PNP general purpose transistors
* = t: made in Malaysia.
TYPE NUMBER
MARKING CODE
3M*
3D*
3H*
3G*
3A*
3B*
3E*
3F*
(1)
2
PINNING
handbook, halfpage
Fig.1
PIN
1
2
3
Top view
Simplified outline (SOT323; SC70) and
symbol.
1
base
emitter
collector
3
BC856W; BC857W;
DESCRIPTION
2
MAM048
Product data sheet
1
BC858W
3
2