BCW33 T/R NXP Semiconductors, BCW33 T/R Datasheet - Page 3

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BCW33 T/R

Manufacturer Part Number
BCW33 T/R
Description
Transistors Bipolar - BJT TRANS GP TAPE-7
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BCW33 T/R

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
32 V
Collector- Emitter Voltage Vceo Max
32 V
Emitter- Base Voltage Vebo
5 V
Collector-emitter Saturation Voltage
5 V
Gain Bandwidth Product Ft
100 MHz
Dc Collector/base Gain Hfe Min
420 at 2 mA at 5 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-23
Continuous Collector Current
0.1 A
Maximum Power Dissipation
250 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
3000
Part # Aliases
BCW33,215
NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
2004 Feb 06
R
I
I
h
V
V
V
C
f
F
j
CBO
EBO
T
FE
SYMBOL
SYMBOL
= 25 °C unless otherwise specified.
CEsat
BEsat
BE
NPN general purpose transistors
th(j-a)
c
thermal resistance from junction to ambient
collector cut-off current
emitter cut-off current
DC current gain
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
base-emitter voltage
collector capacitance
transition frequency
noise figure
BCW31
BCW32
BCW33
BCW31
BCW32
BCW33
PARAMETER
PARAMETER
I
I
I
I
I
I
I
I
I
I
I
I
f = 100 MHz
I
R
E
E
C
C
C
C
C
C
C
C
E
C
C
S
= 0; V
= 0; V
= I
= 0; V
= 10 μA; V
= 2 mA; V
= 10 mA; I
= 50 mA; I
= 10 mA; I
= 50 mA; I
= 2 mA; V
= 10 mA; V
= 200 μA; V
= 2 kΩ; f = 1 kHz; B = 200 Hz
e
= 0; V
CB
CB
EB
3
CONDITIONS
= 32 V
= 32 V; T
= 5 V
CE
CE
CB
B
B
B
B
CE
CE
CE
= 0.5 mA
= 2.5 mA
= 0.5 mA
= 2.5 mA
= 5 V
= 5 V
= 10 V; f = 1 MHz −
= 5 V
= 5 V;
= 5 V;
note 1
CONDITIONS
j
= 100 °C
BCW31; BCW32; BCW33
110
200
420
550
100
MIN.
VALUE
500
190
330
600
120
210
750
850
2.5
TYP.
Product data sheet
100
10
100
220
450
800
250
700
10
MAX.
UNIT
K/W
nA
μA
nA
mV
mV
mV
mV
mV
pF
MHz
dB
UNIT

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