BC847BVN T/R NXP Semiconductors, BC847BVN T/R Datasheet - Page 10
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BC847BVN T/R
Manufacturer Part Number
BC847BVN T/R
Description
Transistors Bipolar - BJT TRANS DOUBLE TAPE-7
Manufacturer
NXP Semiconductors
Datasheet
1.BC847BW_TR.pdf
(18 pages)
Specifications of BC847BVN T/R
Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Dual
Transistor Polarity
NPN/PNP
Collector- Base Voltage Vcbo
50 V
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Collector-emitter Saturation Voltage
5 V
Gain Bandwidth Product Ft
100 MHz
Dc Collector/base Gain Hfe Min
200 at 2 mA at 5 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-666
Continuous Collector Current
0.1 A
Maximum Power Dissipation
300 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
4000
Part # Aliases
BC847BVN,115
NXP Semiconductors
BC847_SER
Product data sheet
Fig 15. Package outline SOT416 (SC-75)
Fig 16. Package outline SOT883 (SC-101)
All information provided in this document is subject to legal disclaimers.
1.75
1.45
Dimensions in mm
Dimensions in mm
Rev. 8 — 20 August 2012
0.9
0.7
0.30
0.22
0.30
0.22
0.20
0.12
1
2
0.62
0.55
0.55
0.47
0.35
3
1.8
1.4
1
1
45 V, 100 mA NPN general-purpose transistors
3
0.65
2
0.30
0.15
0.45
0.15
0.50
0.46
BC847 series
0.95
0.60
0.25
0.10
1.02
0.95
04-11-04
03-04-03
© NXP B.V. 2012. All rights reserved.
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