BC847BVN T/R NXP Semiconductors, BC847BVN T/R Datasheet - Page 6
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BC847BVN T/R
Manufacturer Part Number
BC847BVN T/R
Description
Transistors Bipolar - BJT TRANS DOUBLE TAPE-7
Manufacturer
NXP Semiconductors
Datasheet
1.BC847BW_TR.pdf
(18 pages)
Specifications of BC847BVN T/R
Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Dual
Transistor Polarity
NPN/PNP
Collector- Base Voltage Vcbo
50 V
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Collector-emitter Saturation Voltage
5 V
Gain Bandwidth Product Ft
100 MHz
Dc Collector/base Gain Hfe Min
200 at 2 mA at 5 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-666
Continuous Collector Current
0.1 A
Maximum Power Dissipation
300 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
4000
Part # Aliases
BC847BVN,115
NXP Semiconductors
BC847_SER
Product data sheet
Fig 1.
Fig 3.
V
(mV)
CEsat
h
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
FE
400
300
200
100
10
10
10
10
0
10
3
2
V
Group A: DC current gain as a function of
collector current; typical values
I
as a function of collector current; typical
values
Group A: Collector-emitter saturation voltage
−1
C
−1
amb
amb
amb
amb
amb
amb
CE
/I
B
= 5 V
= 20
= 150 C
= 25 C
= 55 C
= 150 C
= 25 C
= 55 C
1
1
(1)
(2)
(3)
(1)
(2)
(3)
10
10
10
10
2
2
All information provided in this document is subject to legal disclaimers.
I
I
C
C
(mA)
(mA)
mgt723
mgt725
10
10
Rev. 8 — 20 August 2012
3
3
Fig 2.
Fig 4.
V
(mV)
(mV)
BEsat
V
BE
(1) T
(2) T
(3) T
1200
1000
(1) T
(2) T
(3) T
1200
1000
45 V, 100 mA NPN general-purpose transistors
800
600
400
200
800
600
400
200
0
10
0
10
V
Group A: Base-emitter voltage as a function of
collector current; typical values
I
Group A: Base-emitter saturation voltage as a
function of collector current; typical values
C
−1
−1
amb
amb
amb
amb
amb
amb
CE
/I
B
= 5 V
= 10
= 55 C
= 25 C
= 150 C
= 55 C
= 25 C
= 150 C
1
1
(1)
(2)
(3)
(1)
(2)
(3)
10
10
BC847 series
10
10
© NXP B.V. 2012. All rights reserved.
2
2
I
I
C
C
(mA)
(mA)
mgt726
mgt724
10
10
3
3
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