BC817DS T/R NXP Semiconductors, BC817DS T/R Datasheet - Page 5

• Manufacturer Part Number: BC817DS T/R
• Description: Transistors Bipolar - BJT TRANS DOUBLE TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of BC817DS T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Dual
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 160 at 100 mA at 1 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-457
• Continuous Collector Current: 0.5 A
• Maximum Power Dissipation: 600 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: BC817DS,115

NXP Semiconductors
PACKAGE OUTLINE
2002 Nov 22
Plastic surface mounted package; 6 leads
NPN general purpose double transistor
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT457
1.1
0.9
A
y
0.013
0.1
A 1
pin 1
index
6
1
0.40
0.25
b p
e
IEC
0.26
0.10
c
D
5
2
3.1
2.7
D
b p
JEDEC
1.7
1.3
E
REFERENCES
0
4
3
0.95
e
w
M
H E
3.0
2.5
B
SC-74
B
scale
EIAJ
5
1
0.6
0.2
L p
A
0.33
0.23
Q
A 1
2 mm
0.2
v
0.2
w
H E
E
detail X
PROJECTION
0.1
EUROPEAN
y
L p
Q
c
A
Product data sheet
BC817DS
ISSUE DATE
97-02-28
01-05-04
X
v
M
SOT457
A