PMP4501G /T3 NXP Semiconductors, PMP4501G /T3 Datasheet - Page 12

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PMP4501G /T3

Manufacturer Part Number
PMP4501G /T3
Description
Transistors Bipolar - BJT MATCHED PAIR
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PMP4501G /T3

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Dual
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
50 V
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
6 V
Collector-emitter Saturation Voltage
6 V
Gain Bandwidth Product Ft
250 MHz
Dc Collector/base Gain Hfe Min
200 at 2 mA at 5 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-353
Continuous Collector Current
0.1 A
Maximum Power Dissipation
300 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
10000
Part # Aliases
PMP4501G,135
NXP Semiconductors
12. Revision history
Table 10.
PMP4501V_G_Y_4
Product data sheet
Document ID
PMP4501V_G_Y_4
Modifications:
PMP4501V_G_Y_3
PMP4501G_Y_2
PMP4501G_Y_1
Revision history
Release date
20090828
20060919
20060214
20060202
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
Figure 14 “Reflow soldering footprint
Figure 16 “Wave soldering footprint SOT353
Figure 17 “Reflow soldering footprint SOT363
Figure 18 “Wave soldering footprint SOT363
PMP4501V; PMP4501G; PMP4501Y
Data sheet status
Product data sheet
Product data sheet
Product data sheet
Product data sheet
Rev. 04 — 28 August 2009
SOT666”: updated
Change notice
-
-
-
-
(SC-88A)”: updated
(SC-88)”: updated
(SC-88)”: updated
NPN/NPN matched double transistors
Supersedes
PMP4501V_G_Y_3
PMP4501G_Y_2
PMP4501G_Y_1
-
© NXP B.V. 2009. All rights reserved.
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