IS42S16160D-7TL-TR ISSI, Integrated Silicon Solution Inc, IS42S16160D-7TL-TR Datasheet - Page 34
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IS42S16160D-7TL-TR
Manufacturer Part Number
IS42S16160D-7TL-TR
Description
IC SDRAM 256MBIT 143MHZ 54TSOP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Type
SDRAMr
Specifications of IS42S16160D-7TL-TR
Format - Memory
RAM
Memory Type
SDRAM
Memory Size
256M (16Mx16)
Speed
143MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
54-TSOP II
Organization
16Mx16
Density
256Mb
Address Bus
15b
Access Time (max)
6.5/5.4ns
Maximum Clock Rate
143MHz
Operating Supply Voltage (typ)
3.3V
Package Type
TSOP-II
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
130mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IS42S83200D, IS42S16160D
34
Notes:
1) CAS latency = 2, Burst Length = 4
2) x16: A9, A11, and A12 = "Don't Care"
ALTERNATING BANK READ ACCESSES
A0-A9, A11, A12
x8: A11 and A12 = "Don't Care"
DQML, DQMH
COMMAND
BA0, BA1
DQM/
CKE
CLK
A10
DQ
t
t
CKS
CMS
t
t
t
BANK 0
AS
AS
AS
ACTIVE
ROW
ROW
T0
t
CKH
t
t
t
t
CMH
AH
AH
AH
t
t
t
t
RCD
RRD
RAS
RC
t
- BANK 0
CK
- BANK 0
- BANK 0
ENABLE AUTO PRECHARGE
T1
NOP
t
t
CMS
CL
COLUMN m
BANK 0
READ
T2
t
CMH
t
CH
(2)
CAS Latency - BANK 0
T3
NOP
t
LZ
t
AC
BANK 3
ACTIVE
ROW
ROW
T4
D
OUT
t
OH
m
t
Integrated Silicon Solution, Inc. — www.issi.com
AC
t
RCD
- BANK 3
ENABLE AUTO PRECHARGE
T5
D
NOP
OUT
t
OH
m+
t
1
AC
COLUMN b
BANK 3
READ
T6
D
OUT
t
OH
m+
t
(2)
RP
t
2
AC
CAS Latency - BANK 3
- BANK 0
T7
D
NOP
OUT
t
OH
m+
t
3
AC
BANK 0
ACTIVE
ROW
T8
ROW
DON'T CARE
D
OUT
t
OH
b
t
RCD
t
AC
- BANK 0
Rev. 00D
12/12/07