IS42S16160D-7TL-TR ISSI, Integrated Silicon Solution Inc, IS42S16160D-7TL-TR Datasheet - Page 44
![no-image](/images/manufacturer_photos/0/3/347/issi__integrated_silicon_solution_inc_sml.jpg)
IS42S16160D-7TL-TR
Manufacturer Part Number
IS42S16160D-7TL-TR
Description
IC SDRAM 256MBIT 143MHZ 54TSOP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Type
SDRAMr
Specifications of IS42S16160D-7TL-TR
Format - Memory
RAM
Memory Type
SDRAM
Memory Size
256M (16Mx16)
Speed
143MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
54-TSOP II
Organization
16Mx16
Density
256Mb
Address Bus
15b
Access Time (max)
6.5/5.4ns
Maximum Clock Rate
143MHz
Operating Supply Voltage (typ)
3.3V
Package Type
TSOP-II
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
130mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IS42S83200D, IS42S16160D
ALTERNATING BANK WRITE ACCESSES
Notes:
1) Burst Length = 4
2) x16: A9, A11, and A12 = "Don't Care"
44
A0-A9, A11, A12
x8: A11 and A12 = "Don't Care"
DQM/DQML
COMMAND
BA0, BA1
DQMH
CKE
CLK
A10
DQ
t
t
CKS
CMS
t
t
t
BANK 0
AS
AS
AS
ACTIVE
ROW
ROW
T0
t
CKH
t
t
t
t
CMH
AH
AH
AH
t
t
t
t
RCD
RRD
RAS
RC
t
CK
- BANK 0
- BANK 0
- BANK 0
ENABLE AUTO PRECHARGE
T1
NOP
t
t
CMS
CL
t
COLUMN m
BANK 0
DS
WRITE
D
T2
IN
t
CMH
t
t
DH
m
CH
(2)
t
DS
D
T3
NOP
IN
t
m+
DH
1
t
BANK 1
DS
ACTIVE
ROW
ROW
D
T4
IN
t
m+
DH
2
t
RCD
t
DS
D
- BANK 1
ENABLE AUTO PRECHARGE
Integrated Silicon Solution, Inc. — www.issi.com
T5
IN
NOP
m+
t
DH
t
DPL
3
- BANK 0
t
COLUMN b
DS
BANK 1
WRITE
D
T6
IN
t
DH
b
(2)
t
DS
D
t
RP
T7
NOP
IN
t
- BANK 0
b+
DH
1
t
DS
D
T8
NOP
IN
t
b+
DH
2
t
DS
ACTIVE
DON'T CARE
BANK 0
D
T9
ROW
ROW
IN
t
b+
t
t
DH
RCD
DPL
3
- BANK 0
- BANK 1
Rev. 00D
12/12/07