MZ0912B100Y TRAY NXP Semiconductors, MZ0912B100Y TRAY Datasheet - Page 7

• Manufacturer Part Number: MZ0912B100Y TRAY
• Description: Transistors Bipolar - BJT BULKTR TNS-MICP
• Manufacturer: NXP Semiconductors

Specifications of MZ0912B100Y TRAY

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 65 V
• Collector- Emitter Voltage Vceo Max: 20 V
• Emitter- Base Voltage Vebo: 3 V
• Maximum Dc Collector Current: 6 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-443A
• Maximum Power Dissipation: 290000 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 4
• Part # Aliases: MZ0912B100Y,114

Philips Semiconductors
1997 Feb 20
handbook, full pagewidth
NPN microwave power transistors
Dimensions in mm.
Substrate: Epsilam 10.
Thickness: 0.635 mm.
Permittivity:
r
= 10.
40
18
0.635
30
12.5
2 3
L1
Fig.7 Broadband test circuit.
C3
10
3
4
5
7
10
MX0912B100Y; MZ0912B100Y
5
C2
16
3
C5
30
0.635
10
L2
V CC
C4
3 1
7
MGK067
C1
3
Product specification
40