BC327-40 T/R NXP Semiconductors, BC327-40 T/R Datasheet - Page 7
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BC327-40 T/R
Manufacturer Part Number
BC327-40 T/R
Description
Transistors Bipolar - BJT TRANS GP TAPE RADIAL
Manufacturer
NXP Semiconductors
Datasheet
1.BC807-16_TR.pdf
(19 pages)
Specifications of BC327-40 T/R
Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
50 V
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
0.5 A
Gain Bandwidth Product Ft
80 MHz
Dc Collector/base Gain Hfe Min
250 at 100 mA at 1 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-54
Dc Current Gain Hfe Max
250 at 100 mA at 1 V
Maximum Power Dissipation
625 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
2000
Part # Aliases
BC327-40,116
NXP Semiconductors
BC807_BC807W_BC327_6
Product data sheet
Fig 4.
Fig 6.
V
−10
BEsat
(V)
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
−10
−1
−1
−10
I
Selection -16: Base-emitter saturation voltage
as a function of collector current; typical
values
I
Selection -40: Base-emitter saturation voltage as a function of collector current; typical values
C
C
−1
amb
amb
amb
amb
amb
amb
/I
/I
B
B
= 10
= 10
= −55 °C
= 25 °C
= 150 °C
= −55 °C
= 25 °C
= 150 °C
−1
(1)
(2)
(3)
−10
V
−10
BEsat
(V)
−10
−10
−1
−1
−10
2
−1
I
006aaa122
C
(mA)
Rev. 06 — 17 November 2009
−10
−1
3
(1)
(2)
(3)
−10
Fig 5.
V
BC807; BC807W; BC327
−10
BEsat
(V)
(1) T
(2) T
(3) T
45 V, 500 mA PNP general-purpose transistors
−10
−1
−10
−1
−10
I
Selection -25: Base-emitter saturation voltage
as a function of collector current; typical
values
2
C
−1
amb
amb
amb
I
/I
006aaa124
C
B
(mA)
= 10
= −55 °C
= 25 °C
= 150 °C
−10
−1
3
(1)
(2)
(3)
−10
−10
© NXP B.V. 2009. All rights reserved.
2
I
006aaa123
C
(mA)
−10
3
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