PZT2222A T/R NXP Semiconductors, PZT2222A T/R Datasheet - Page 5
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PZT2222A T/R
Manufacturer Part Number
PZT2222A T/R
Description
Transistors Bipolar - BJT TRANS SW TAPE-7
Manufacturer
NXP Semiconductors
Datasheet
1.PZT2222A_T3.pdf
(7 pages)
Specifications of PZT2222A T/R
Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
75 V
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
6 V
Collector-emitter Saturation Voltage
6 V
Gain Bandwidth Product Ft
300 MHz
Dc Collector/base Gain Hfe Min
35 at 0.1 mA at 10 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-223
Continuous Collector Current
0.6 A
Maximum Power Dissipation
1150 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
1000
Part # Aliases
PZT2222A,115
NXP Semiconductors
PACKAGE OUTLINE
1999 Apr 14
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
NPN switching transistor
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT223
1.8
1.5
A
0.10
0.01
A
1
1
y
0.80
0.60
b
p
IEC
e
3.1
2.9
1
b
1
b
0.32
0.22
D
e
1
c
2
b
6.7
6.3
D
p
JEDEC
4
3.7
3.3
E
REFERENCES
3
0
4.6
e
w
B
M
2.3
e
SC-73
B
scale
1
EIAJ
5
2
c
7.3
6.7
H
E
A
4 mm
1.1
0.7
L
1
p
0.95
0.85
Q
0.2
v
H
E
E
detail X
0.1
w
PROJECTION
EUROPEAN
0.1
y
A
L
p
Q
Product data sheet
PZT2222A
X
ISSUE DATE
97-02-28
99-09-13
v
A
M
A
SOT223