PBSS305PD T/R NXP Semiconductors, PBSS305PD T/R Datasheet - Page 8

• Manufacturer Part Number: PBSS305PD T/R
• Description: Transistors Bipolar - BJT TRANS BISS TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PBSS305PD T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 100 V
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 2 A
• Gain Bandwidth Product Ft: 110 MHz
• Dc Collector/base Gain Hfe Min: 175 at 500 mA at 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSOP
• Dc Current Gain Hfe Max: 175 at 500 mA at 2 V
• Maximum Power Dissipation: 2500 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: PBSS305PD,115

NXP Semiconductors
PBSS305PD_2
Product data sheet
Fig 6.
Fig 8.
V
h
(V)
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
FE
BE
−1.2
−0.8
−0.4
600
400
200
−10
−10
0
0
V
DC current gain as a function of collector
current; typical values
V
Base-emitter voltage as a function of collector
current; typical values
−1
−1
CE
amb
amb
amb
CE
amb
amb
amb
= −2 V
= −2 V
= 100 °C
= 25 °C
= −55 °C
= −55 °C
= 25 °C
= 100 °C
−1
−1
(1)
(2)
(3)
(1)
(2)
(3)
−10
−10
−10
−10
2
2
−10
−10
006aaa743
006aaa745
3
I
3
I
C
C
(mA)
(mA)
Rev. 02 — 8 December 2009
−10
−10
4
4
Fig 7.
Fig 9.
V
BEsat
(V)
(A)
I
(1) T
(2) T
(3) T
−1.2
−0.8
−0.4
C
−6
−4
−2
−10
0
0
0
T
Collector current as a function of
collector-emitter voltage; typical values
I
Base-emitter saturation voltage as a function
of collector current; typical values
C
I
−1
100 V, 2 A PNP low V
amb
amb
amb
amb
B
/I
−675
−600
−525
−450
−375
−300
= −750 mA
B
= 20
= 25 °C
= −55 °C
= 25 °C
= 100 °C
−0.4
−1
(1)
(2)
(3)
−0.8
−10
PBSS305PD
−10
−1.2
2
CEsat
−10
−1.6
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
−225
−150
006aaa744
−75
006aaa746
V
3
I
C
CE
(mA)
(V)
−10
−2.0
4
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