PBSS3540E T/R NXP Semiconductors, PBSS3540E T/R Datasheet - Page 2

• Manufacturer Part Number: PBSS3540E T/R
• Description: Transistors Bipolar - BJT LOW VCESAT (BLISS) TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PBSS3540E T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 40 V
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 6 V
• Gain Bandwidth Product Ft: 300 MHz
• Dc Collector/base Gain Hfe Min: 200 at 10 mA at 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-75
• Continuous Collector Current: 0.5 A
• Maximum Power Dissipation: 250 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: PBSS3540E,115

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Marking
PBSS3540E_2
Product data sheet
Table 2.
Table 3.
Table 4.
Pin
1
2
3
Type number
PBSS3540E
Type number
PBSS3540E
Pinning
Ordering information
Marking codes
Description
base
emitter
collector
Package
Name
SC-75
Rev. 02 — 11 December 2009
Description
plastic surface mounted package; 3 leads
Marking code
1T
40 V, 500 mA PNP low V
Simplified outline
1
3
2
PBSS3540E
CEsat
Symbol
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
1
sym013
Version
SOT416
3
2
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