BC847BW /T3 NXP Semiconductors, BC847BW /T3 Datasheet - Page 9

• Manufacturer Part Number: BC847BW /T3
• Description: Transistors Bipolar - BJT TRANS GP TAPE-11
• Manufacturer: NXP Semiconductors

Specifications of BC847BW /T3

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 6 V
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 200 at 2 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-323
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 200 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 10000
• Part # Aliases: BC847BW,135

NXP Semiconductors
8. Package outline
BC847_SER
Product data sheet
Fig 13. Package outline SOT23 (TO-236AB)
Fig 14. Package outline SOT323 (SC-70)
All information provided in this document is subject to legal disclaimers.
2.5
2.1
2.2
2.0
Dimensions in mm
Dimensions in mm
Rev. 8 — 20 August 2012
1.4
1.2
1.35
1.15
1
1
3.0
2.8
1.9
2.2
1.8
1.3
45 V, 100 mA NPN general-purpose transistors
3
3
2
0.4
0.3
2
0.45
0.15
0.48
0.38
0.45
0.15
BC847 series
1.1
0.8
0.25
0.10
1.1
0.9
0.15
0.09
04-11-04
04-11-04
© NXP B.V. 2012. All rights reserved.
9 of 18