PMP4201G T/R NXP Semiconductors, PMP4201G T/R Datasheet - Page 11

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PMP4201G T/R

Manufacturer Part Number
PMP4201G T/R
Description
Transistors Bipolar - BJT MATCHED PAIR
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PMP4201G T/R

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Dual
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
50 V
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
6 V
Collector-emitter Saturation Voltage
6 V
Gain Bandwidth Product Ft
250 MHz
Dc Collector/base Gain Hfe Min
200 at 2 mA at 5 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-353
Continuous Collector Current
0.1 A
Maximum Power Dissipation
300 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
3000
Part # Aliases
PMP4201G,115
NXP Semiconductors
PMP4201V_G_Y_4
Product data sheet
Fig 17. Reflow soldering footprint SOT363 (SC-88)
Fig 18. Wave soldering footprint SOT363 (SC-88)
4.5
2.35
1.5
PMP4201V; PMP4201G; PMP4201Y
1.3
(4 )
0.6
(4 )
0.5
Rev. 04 — 28 August 2009
2.45
5.3
(4 )
(4 )
0.5
0.6
1.3
2.65
1.8
(2 )
0.6
1.5
1.5
0.4 (2 )
0.3
NPN/NPN matched double transistors
2.5
Dimensions in mm
direction during soldering
Dimensions in mm
© NXP B.V. 2009. All rights reserved.
solder lands
solder resist
solder paste
occupied area
preferred transport
sot363_fr
solder lands
solder resist
occupied area
sot363_fw
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