PUMX2 T/R NXP Semiconductors, PUMX2 T/R Datasheet - Page 5

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PUMX2 T/R

Manufacturer Part Number
PUMX2 T/R
Description
Transistors Bipolar - BJT DOUBLE NPN TRANSISTR
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PUMX2 T/R

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Dual
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
60 V
Collector- Emitter Voltage Vceo Max
50 V
Emitter- Base Voltage Vebo
7 V
Collector-emitter Saturation Voltage
7 V
Gain Bandwidth Product Ft
100 MHz
Dc Collector/base Gain Hfe Min
120 at 1 mA at 6 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-363
Continuous Collector Current
0.15 A
Maximum Power Dissipation
300 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
3000
Part # Aliases
PUMX2,115
NXP Semiconductors
10. Soldering
PUMX2_2
Product data sheet
Fig 2.
Fig 3.
4.5
2.35
Reflow soldering footprint SOT363 (SC-88)
Wave soldering footprint SOT363 (SC-88)
1.5
1.3
(4×)
0.6
(4×)
0.5
Rev. 02 — 17 November 2009
2.45
5.3
(4×)
(4×)
0.5
0.6
1.3
2.65
1.8
(2×)
0.6
NPN/NPN general-purpose double transistors
1.5
1.5
0.4 (2×)
0.3
2.5
Dimensions in mm
direction during soldering
Dimensions in mm
© NXP B.V. 2009. All rights reserved.
solder lands
solder resist
solder paste
occupied area
preferred transport
PUMX2
sot363_fr
solder lands
solder resist
occupied area
sot363_fw
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