BC857BS /T3 NXP Semiconductors, BC857BS /T3 Datasheet - Page 4

• Manufacturer Part Number: BC857BS /T3
• Description: Transistors Bipolar - BJT TRANS DOUBLE TAPE-11
• Manufacturer: NXP Semiconductors

Specifications of BC857BS /T3

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Dual
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.1 A
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 200 at 2 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363
• Maximum Power Dissipation: 300 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 10000
• Part # Aliases: BC857BS,135

NXP Semiconductors
1999 Apr 26
handbook, full pagewidth
PNP general purpose double transistor
h FE
400
300
200
100
−10
0
−2
−10
−1
Fig.2 DC current gain; typical values
−1
4
−10
V CE = −5 V
−10
2
I C (mA)
Product data sheet
BC857BS
MBH727
−10
3