BCW32 T/R NXP Semiconductors, BCW32 T/R Datasheet - Page 4
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BCW32 T/R
Manufacturer Part Number
BCW32 T/R
Description
Transistors Bipolar - BJT TRANS GP TAPE-7
Manufacturer
NXP Semiconductors
Datasheet
1.BCW33_TR.pdf
(6 pages)
Specifications of BCW32 T/R
Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
32 V
Collector- Emitter Voltage Vceo Max
32 V
Emitter- Base Voltage Vebo
5 V
Collector-emitter Saturation Voltage
5 V
Gain Bandwidth Product Ft
100 MHz
Dc Collector/base Gain Hfe Min
200 at 2 mA at 5 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-23
Continuous Collector Current
0.1 A
Maximum Power Dissipation
250 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
3000
Part # Aliases
BCW32,215
NXP Semiconductors
PACKAGE OUTLINE
2004 Feb 06
NPN general purpose transistors
Plastic surface-mounted package; 3 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT23
1.1
0.9
A
max.
0.1
A
1
1
0.48
0.38
b
p
IEC
e 1
0.15
0.09
c
D
e
3.0
2.8
D
b p
3
TO-236AB
JEDEC
1.4
1.2
E
REFERENCES
0
2
1.9
e
w
B
0.95
M
e
1
JEITA
scale
B
1
4
2.5
2.1
H
E
0.45
0.15
L
p
A
2 mm
A 1
0.55
0.45
Q
BCW31; BCW32; BCW33
H E
0.2
E
v
detail X
PROJECTION
0.1
EUROPEAN
w
L p
A
Q
c
X
Product data sheet
v
ISSUE DATE
M
04-11-04
06-03-16
A
SOT23