BC856W T/R NXP Semiconductors, BC856W T/R Datasheet - Page 8

• Manufacturer Part Number: BC856W T/R
• Description: Transistors Bipolar - BJT TRANS GP TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of BC856W T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 80 V
• Collector- Emitter Voltage Vceo Max: 65 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 125 at 2 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-323
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 200 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: BC856W,115

NXP Semiconductors
PACKAGE OUTLINE
2002 Feb 04
Plastic surface mounted package; 3 leads
PNP general purpose transistors
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT323
1.1
0.8
A
max
0.1
A 1
1
0.4
0.3
b p
y
IEC
e 1
0.25
0.10
c
D
e
b p
2.2
1.8
D
3
JEDEC
1.35
1.15
E
0
2
REFERENCES
1.3
e
w
B
M
0.65
B
e 1
scale
SC-70
EIAJ
8
1
2.2
2.0
H E
A
0.45
0.15
L p
A 1
BC856W; BC857W; BC858W
2 mm
0.23
0.13
Q
H E
0.2
E
v
detail X
0.2
PROJECTION
w
EUROPEAN
L p
A
Q
c
Product data sheet
X
v
ISSUE DATE
97-02-28
M
A
SOT323