BCX17 /T3 NXP Semiconductors, BCX17 /T3 Datasheet - Page 4

• Manufacturer Part Number: BCX17 /T3
• Description: Transistors Bipolar - BJT TRANS GP TAPE-11
• Manufacturer: NXP Semiconductors

Specifications of BCX17 /T3

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.5 A
• Gain Bandwidth Product Ft: 80 MHz
• Dc Collector/base Gain Hfe Min: 100 at 100 mA at 1 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Maximum Power Dissipation: 250 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 10000
• Part # Aliases: BCX17,235

NXP Semiconductors
CHARACTERISTICS
T
Note
1. V
2004 Jan 16
I
I
h
V
V
C
f
SYMBOL
j
CBO
EBO
T
FE
= 25 °C unless otherwise specified.
CEsat
BE
PNP general purpose transistors
c
BE
decreases by approximately −2 mV/°C with increasing temperature.
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
base-emitter voltage
collector capacitance
transition frequency
PARAMETER
I
I
I
I
I
I
I
I
I
I
E
E
C
C
C
C
C
C
E
C
= 0; V
= 0; V
= I
= 0; V
= −100 mA; V
= −300 mA; V
= −500 mA; V
= −500 mA; I
= −500 mA; V
= −10 mA; V
e
= 0; V
CB
CB
EB
4
= −20 V
= −20 V; T
= −5 V
CB
CONDITIONS
CE
B
= −10 V; f = 1 MHz
CE
CE
CE
CE
= −50 mA
= −5 V; f = 100 MHz
= −1 V
= −1 V
= −1 V
= −1 V; note 1
j
= 150 °C
−
−
−
100
70
40
−
−
−
80
MIN. TYP. MAX. UNIT
BCX17; BCX18
−
−
−
−
−
−
−
−
9
−
Product data sheet
−100
−5
−100
600
−
−
−620
−1.2
−
−
nA
μA
nA
mV
V
pF
MHz