2N4401 T/R NXP Semiconductors, 2N4401 T/R Datasheet - Page 5

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2N4401 T/R

Manufacturer Part Number
2N4401 T/R
Description
Transistors Bipolar - BJT NPN SW 600MA 40V
Manufacturer
NXP Semiconductors
Datasheet

Specifications of 2N4401 T/R

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
60 V
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
6 V
Collector-emitter Saturation Voltage
6 V
Maximum Dc Collector Current
800 mA
Gain Bandwidth Product Ft
250 MHz
Dc Collector/base Gain Hfe Min
20
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-54
Continuous Collector Current
600 mA
Dc Current Gain Hfe Max
300
Maximum Power Dissipation
630 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
2000
Part # Aliases
2N4401,116
Philips Semiconductors
PACKAGE OUTLINE
2004 Oct 28
NPN switching transistor
Plastic single-ended leaded (through hole) package; 3 leads
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
UNIT
mm
VERSION
OUTLINE
SOT54
D
5.2
5.0
A
0.48
0.40
d
b
E
3
1
2
0.66
0.55
b 1
IEC
b
1
0.45
0.38
c
4.8
4.4
D
JEDEC
TO-92
1.7
1.4
d
REFERENCES
0
4.2
3.6
E
2.54
A
e
SC-43A
JEITA
scale
2.5
5
1.27
e 1
14.5
12.7
5 mm
L
L 1
L
max.
2.5
1
(1)
L
PROJECTION
EUROPEAN
Product specification
ISSUE DATE
b
97-02-28
04-06-28
c
2N4401
e 1
e
SOT54

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