PZTA14 /T3 NXP Semiconductors, PZTA14 /T3 Datasheet - Page 2

• Manufacturer Part Number: PZTA14 /T3
• Description: Transistors Bipolar - BJT TRANS DARLINGTON TAPE-13
• Manufacturer: NXP Semiconductors

Specifications of PZTA14 /T3

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 30 V
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 10 V
• Maximum Dc Collector Current: 0.5 A
• Dc Collector/base Gain Hfe Min: 10000 at 10 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-223-4
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 4000
• Part # Aliases: PZTA14,135

NXP Semiconductors
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 30 V).
APPLICATIONS
• Pre-amplifiers requiring high input impedance.
DESCRIPTION
NPN Darlington transistor in a SOT223 plastic package.
PNP complement: PZTA64.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
1999 Apr 14
V
V
V
I
I
I
P
T
T
T
C
CM
B
SYMBOL
stg
j
amb
CBO
CES
EBO
tot
NPN Darlington transistor
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
storage temperature
junction temperature
operating ambient temperature
PARAMETER
open emitter
V
open collector
T
amb
BE
= 0
≤ 25 °C; note 1
2
CONDITIONS
PINNING
handbook, halfpage
PIN
2, 4
Fig.1 Simplified outline (SOT223) and symbol.
1
3
Top view
1
base/input
collector/output
emitter/ground
2
4
3
−
−
−
−
−
−
−
−65
−
−65
MIN.
DESCRIPTION
30
30
10
500
800
200
1.25
+150
150
+150
MAM319
1
Product data sheet
MAX.
TR1
PZTA14
2, 4
3
TR2
V
V
V
mA
mA
mA
W
°C
°C
°C
2
.
UNIT